Aminbeidokhti, Amirhossein : rechercher sur Z-Library

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1

A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications

Amirhossein Aminbeidokhti, Ali A. Orouji

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2011

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2011

2

A novel double-recessed 4H-SiC MESFET with partly undoped space region

Ali A. Orouji, Amirhossein Aminbeidokhti

Journal:

Superlattices and Microstructures

Année:

2011

Langue:

english

Fichier:

PDF, 1.67 MB

english, 2011

3

High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

Aminbeidokhti, Amirhossein, Orouji, Ali A., Rahimian, Morteza

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 656 KB

english, 2012

4

SPIE Proceedings [SPIE 16th International Workshop on Physics of Semiconductor Devices - Kanpur, India (Monday 19 December 2011)] 16th International Workshop on Physics of Semiconductor Devices - An improved SOI MESFET with triple-recessed drift region for electrical performance improvement

Orouji, Ali A., Ghasemian, Masoomeh, Aminbeidokhti, Amirhossein, Rahmaninezhad, Soude, Katiyar, Monica, Mazhari, B., Mohapatra, Y N.

Année:

2012

Langue:

english

Fichier:

PDF, 346 KB

english, 2012

5

A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement

Rahimian, Morteza, Orouji, Ali A., Aminbeidokhti, Amirhossein

Journal:

Current Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 1.69 MB

english, 2013

6

A novel high frequency SOI MESFET by modified gate capacitances

Orouji, Ali A., Ramezani, Zeinab, Keshavarzi, P., Aminbeidokhti, Amirhossein

Journal:

Superlattices and Microstructures

Année:

2013

Langue:

english

Fichier:

PDF, 2.44 MB

english, 2013

7

[IEEE 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA) - Kuala Lumpur, Malaysia (2011.04.25-2011.04.27)] 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA) - A novel N-MOSFET with air gaps in gate insulator for deep submicron applications

Orouji, Ali A., Rahimian, Morteza, Aminbeidokhti, Amirhossein

Année:

2011

Langue:

english

Fichier:

PDF, 318 KB

english, 2011

8

[IEEE 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA) - Kuala Lumpur, Malaysia (2011.04.25-2011.04.27)] 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA) - A novel GaAs MESFET with multi-recessed drift region and partly p-type doped space layer

Orouji, Ali A., Aminbeidokhti, Amirhossein, Rahimian, Morteza

Année:

2011

Langue:

english

Fichier:

PDF, 327 KB

english, 2011

9

A new double-recessed 4H-SiC MESFET with superior RF characteristics

Aminbeidokhti, Amirhossein, Orouji, Ali A.

Journal:

International Journal of Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2013

10

32 nm high current performance double gate MOSFET for low power CMOS circuits

Rahimian, Morteza, Orouji, Ali A., Aminbeidokhti, Amirhossein

Journal:

International Journal of Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 962 KB

english, 2015

11

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

Tanner, Philip, Dimitrijev, Sima, Amini Moghadam, Hamid, Aminbeidokhti, Amirhossein, Han, Ji Sheng

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 311 KB

english, 2014

12

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Dimitrijev, Sima, Han, Jisheng, Moghadam, Hamid Amini, Aminbeidokhti, Amirhossein

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 729 KB

english, 2015

13

A novel symmetric GaN MESFET by dual extra layers of Si3N4

Ramezani, Zeinab, Orouji, Ali A., Aminbeidokhti, Amirhossein

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2015

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2015

14

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Moghadam, Hamid Amini, Dimitrijev, Sima, Han, Jisheng, Haasmann, Daniel, Aminbeidokhti, Amirhossein

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2015

15

A method for extraction of electron mobility in power HEMTs

Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Han, Jisheng, Xu, Xiangang, Wang, Chengxin, Qu, Shuang, Amini Moghadam, Hamid, Tanner, Philip, Massoubre, David, Walker, Glenn

Journal:

Superlattices and Microstructures

Année:

2015

Langue:

english

Fichier:

PDF, 703 KB

english, 2015

16

Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs

Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Kumar Hanumanthappa, Anil, Amini Moghadam, Hamid, Haasmann, Daniel, Han, Jisheng, Shen, Yan, Xu, Xiangang

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 2.28 MB

english, 2016

17

The Power Law of Phonon-Limited Electron Mobility in the 2-D Electron Gas of AlGaN/GaN Heterostructure

Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Han, Jisheng, Chen, Xiufang, Xu, Xiangang

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 999 KB

english, 2016

18

Dipole Type Behavior of NO Grown Oxides on 4H–SiC

Haasmann, Daniel, Amini Moghadam, Hamid, Han, Ji Sheng, Aminbeidokhti, Amirhossein, Iacopi, Alan, Dimitrijev, Sima

Journal:

Materials Science Forum

Année:

2016

Langue:

english

Fichier:

PDF, 385 KB

english, 2016

19

Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors

Amini Moghadam, Hamid, Dimitrijev, Sima, Han, Ji Sheng, Aminbeidokhti, Amirhossein, Haasmann, Daniel

Journal:

Materials Science Forum

Année:

2016

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2016